GT60N321(Q)
| Part Number |
GT60N321(Q)
|
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Other part numbers | |
| Description | IGBT 1000V 60A TO-3P |
| Specification document |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Through Hole | |
| Operating Temperature | 150°C (TJ) | |
| IGBT Type | - | |
| Input Type | Standard | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | 2.5 µs | |
| Switching Energy | - | |
| Current - Collector (Ic) (Max) | 60 A | |
| Current - Collector Pulsed (Icm) | 120 A | |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | |
| Power - Max | 170 W | |
| Package / Case | TO-3PL | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Td (on/off) @ 25°C | 330ns/700ns | |
| Supplier Device Package | TO-3P(LH) |
Goods in stock:1600
Can be shipped immediately
